Reactive Ion Etch (RIE) System

The Phantom III Reactive Ion Etcher (RIE) is designed to supply labs with state-of-theart plasma etch capability using single wafers, dies or parts up to 300mm.
The system has up to seven process gases which are used to etch nitrides, oxides and any films or substrates requiring fluorine-based chemistries (such as carbon, epoxy, graphite, indium, molybdenum, oxynitride, polyimide, quartz, silicon, oxide, nitride, tantalum, tantalum nitride, titanium nitride, tungsten and titanium tungsten). This reactor can also be used to strip photoresist and other organic materials. An electrostatic chuck (E-chuck) is offered as an option to more effectively keep the wafer cool during the etch process. This E-chuck uses a helium pressure controller to build up a cooling layer of helium on the backside of the wafer.
An inductively coupled plasma (ICP) source is offered as an option for this tool. The ICP allows the user to create a higher density plasma and thereby increase etch rates and anisotropy.
Samples are loaded into the process chamber by opening the lid and placing wafers on the electrode surface, or “chuck.”

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